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Freescale Semiconductor Technical Data
Document Number: MRF6V10250HS Rev. 0, 2/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications. * Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 sec, Duty Cycle = 10% Power Gain -- 21 dB Drain Efficiency -- 60% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6V10250HSR3
1090 MHz, 250 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFET
CASE 465A - 06, STYLE 1 NI - 780S
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +100 - 6.0, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 250 W Pulsed, 100 sec Pulse Width, 10% Duty Cycle Symbol RJC Value (1,2) 0.10 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6V10250HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 528 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 250 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.32 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.8 340 280 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 2 -- 1.8 2.4 0.25 3 3 -- Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS -- 100 -- -- -- -- -- -- 500 -- 50 2 nAdc Vdc Adc mA Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 250 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz, Pulsed, 100 sec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Part internally matched both on input and output. Gps D IRL 19 55 -- 21 60 - 12 23 -- -9 dB % dB
MRF6V10250HSR3 2 RF Device Data Freescale Semiconductor
+ C12 R2 VBIAS C6 R1 RF INPUT Z1 C1 C2 C3 C4 C5 Z2 Z3 Z4 Z5 C8 DUT C9 Z6 Z7 Z8 C7 L1 L2 C15 C13
+ C14
VSUPPLY
Z9 C10
Z10
RF OUTPUT
C11
Z1 Z2*, Z9* Z3*, Z8* Z4, Z7
0.40 1.29 0.22 0.22
x 0.080 x 0.080 x 0.480 x 0.625
Microstrip Microstrip Microstrip x 0.220 Taper
Z5, Z6 Z10 PCB
0.625 x 0.300 Microstrip 0.430 x 0.080 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
* Line length includes microstrip bends
Figure 1. MRF6V10250HSR3 Test Circuit Schematic
Table 5. MRF6V10250HSR3 Test Circuit Component Designations and Values
Part C1 C2, C9, C11 C3 C4, C5 C6, C10, C12 C7, C15 C8 C13, C14 L1 L2 R1 R2 Description 240 pF Chip Capacitor 1.8 pF Chip Capacitors 3.3 pF Chip Capacitor 5.1 pF Chip Capacitors 39 pF Chip Capacitors 2.2 F, 50 V Chip Capacitors 4.7 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitors 5 nH, 2 Turn Inductor 7 nH, Hand Wound 10 , 1/4 W Chip Resistor 20 , 1 W Chip Resistor Part Number ATC100B241JT500XT ATC100B1R8CT500XT ATC100B3R3CT500XT ATC100B5R1CT500XT ATC100B390JT500XT C1825C225J5RAC ATC100B4R7CT500XT EKME633ELL471MK25S A02TKLC 2T, 18awg CRCW120610R0FKEA CRCW251220R0FKEA Manufacturer ATC ATC ATC ATC ATC Kemet ATC Multicomp Coilcraft Freescale Vishay Vishay
MRF6V10250HSR3 RF Device Data Freescale Semiconductor 3
C7
R2 C6 C13 L1 C15 C12 C1 R1 C5 L2 CUT OUT AREA C8 C9 C11 C10 C14
C2
C3 C4
MRF6V10250H Rev. 3
Figure 2. MRF6V10250HSR3 Test Circuit Component Layout
MRF6V10250HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) Ciss C, CAPACITANCE (pF) 50
10 TJ = 150C TJ = 175C TJ = 200C TC = 25C
10
1
Crss
0.1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
1 1 10 100 300 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain - Source Voltage
24 70 58 57 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 Gps 20 D 18 VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz Pulse Width = 100 sec, Duty Cycle = 10% 16 50 30 100 Pout, OUTPUT POWER (WATTS) PULSED 400 40 50 60 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 49 48 26
Figure 4. DC Safe Operating Area
P3dB = 54.94 dBm (311 W) P1dB = 54.55 dBm (285 W)
Ideal
Actual
VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz Pulse Width = 100 sec, Duty Cycle = 10% 28 30 32 34 36 38
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power
23 22 Gps, POWER GAIN (dB) 750 mA 500 mA 21 250 mA 20 19 18 17 50 100 Pout, OUTPUT POWER (WATTS) PULSED 400 VDD = 50 Vdc, f = 1090 MHz Pulse Width = 100 sec, Duty Cycle = 10% IDQ = 1 A Gps, POWER GAIN (dB) 22 21 20 19
Figure 6. Pulsed Output Power versus Input Power
45 V 18 40 V 17 35 V 16 VDD = 30 V 15 14 50 100 Pout, OUTPUT POWER (WATTS) PULSED
50 V
IDQ = 250 mA, f = 1090 MHz Pulse Width = 100 sec Duty Cycle = 10% 400
Figure 7. Pulsed Power Gain versus Output Power
Figure 8. Pulsed Power Gain versus Output Power
MRF6V10250HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
400 Pout, OUTPUT POWER (WATTS) PULSED TC = -30_C Gps, POWER GAIN (dB) 300 22 25_C 20 50 55_C D 40 VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz Pulse Width = 100 sec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED TC = -30_C 60 D, DRAIN EFFICIENCY (%) 25_C 85_C 200 VDD = 50 Vdc IDQ = 250 mA f = 1090 MHz Pulse Width = 100 sec Duty Cycle = 10% 0 1 2 3 4 5 6 Gps 24 70
85_C
100
18
0 Pin, INPUT POWER (WATTS) PULSED
18 50
30 400
Figure 9. Pulsed Power Output versus Power Input
107
Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power
106 MTTF (HOURS)
105
104
103 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 250 W Peak, Pulse Width = 100 sec, Duty Cycle = 10%, and D = 60%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 11. MTTF versus Junction Temperature
MRF6V10250HSR3 6 RF Device Data Freescale Semiconductor
Zo = 10
Zload
f = 1090 MHz
f = 978 MHz Zsource
f = 978 MHz
f = 1090 MHz
VDD = 50 Vdc, IDQ = 250 mA, Pout = 250 W Peak f MHz 978 1030 1090 Zsource W 1.67 - j2.04 2.39 - j2.23 3.26 - j3.72 Zload W 4.3 - j2.72 5.66 - j2.42 5.85 - j2.39
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF6V10250HSR3 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
CASE 465A - 06 ISSUE H NI - 780S
MRF6V10250HSR3 8 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Feb. 2008 * Initial Release of Data Sheet Description
MRF6V10250HSR3 RF Device Data Freescale Semiconductor 9
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MRF6V10250HSR3
Rev. 10 0, 2/2008 Document Number: MRF6V10250HS
RF Device Data Freescale Semiconductor

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